Key facts
- Brand
- Infineon
- Model
- SPP20N60CFD
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-04-06
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Infineon SPP20N60CFD Datasheet
This document details the key characteristics of the Infineon SPP20N60CFD power MOSFET, including maximum ratings, electrical parameters, and thermal performance. It includes data such as continuous drain current, breakdown voltage, on‑state resistance, gate charge, and avalanche energy.
Additional sections cover typical output characteristics, transient thermal impedance, capacitance values, and package dimensions. The final pages contain legal notices, contact information, and revision history.
Infineon SPP20N60CFD specifications
| Continuous drain current (Id) at 25 °C | 20.7 A |
|---|---|
| Drain‑source breakdown voltage (Vds) | 600 V |
| On‑state resistance (Rds(on)) typ at 25 °C | 0.22 Ω |
| Total gate charge (Qg) | 95 nC |
| Power dissipation (Pd) at 25 °C | 208 W |
| Avalanche energy (single pulse) | 690 mJ |
| Thermal resistance junction‑to‑case (Rjc) | 0.6 K/W |
Source: Infineon SPP20N60CFD Datasheet
All Infineon SPP20N60CFD documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current of the SPP20N60CFD?
The device can conduct a continuous drain current of 20.7 A at 25 °C.
What is the breakdown voltage rating of the SPP20N60CFD?
The MOSFET is rated for a drain‑source breakdown voltage of 600 V.
How much power can the transistor dissipate at 25 °C?
It can dissipate up to 208 W when the case temperature is 25 °C.
What is the thermal resistance from junction to case?
The junction‑to‑case thermal resistance is 0.6 K/W.
What is the thermal resistance from junction to case?
The junction‑to‑case thermal resistance is 0.6 K/W.
From: Infineon SPP20N60CFD Cool MOS Power Transistor Datasheet