This PDF file is the datasheet of SPP20N60S5 Cool MOS™ Power Transistor. The product has the following features: new revolutionary high voltage technology, world's best RDS(on) in TO 220, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.
The SPP20N60S5 is a Cool MOS™ power transistor featuring a 600 V drain‑source breakdown voltage, 20 A continuous drain current, and ultra‑low gate charge. It is supplied in a TO‑220 package and complies with RoHS and JEDEC standards.
The datasheet provides detailed electrical, thermal, and switching characteristics, including on‑state resistance, capacitances, avalanche energy, and typical transient thermal impedance, to aid designers in selecting and integrating the device.
| Continuous drain current (ID) at 25 °C | 20 A |
|---|---|
| Avalanche energy (single pulse) | 690 mJ |
| Power dissipation at 25 °C (PD) | 208 W |
The device can conduct 20 A continuously at an ambient temperature of 25 °C.
It can absorb up to 690 mJ of avalanche energy per pulse.