This document introduces the features and characteristics of two Cool MOS™ power transistors, SPP20N60S5 and SPB20N60S5, including new high voltage technology, best RDS(on) in TO 220 package, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.
The Infineon SPP20N60S5 and SPB20N60S5 are high‑voltage Cool MOS™ power transistors offered in TO‑220 and TO‑263 packages. The document provides detailed maximum ratings, thermal characteristics, and electrical parameters for designers.
Key sections include maximum ratings, thermal resistance, electrical characteristics such as breakdown voltage, on‑state resistance, gate charge, and avalanche energy, as well as typical output and transfer curves. Legal and safety notices conclude the sheet.
| Continuous drain current (Ic) @ 25 °C | 20 A |
|---|---|
| Power dissipation @ 25 °C | 208 W |
| Gate‑source voltage (Vgs) max | +20 V |
The device can conduct up to 20 A continuously at a case temperature of 25 °C.
The maximum gate‑source voltage is +20 V.