This document describes the features and characteristics of the SPP20N60CFD Cool MOS™ power transistor, including the worldwide best RDS(on), ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability, intrinsic fast-recovery body diode, etc.
The SPP20N60CFD is a Cool MOS power transistor from Infineon Technologies. The document provides detailed maximum ratings, electrical parameters, and thermal characteristics for design engineers.
Key sections cover continuous and pulsed drain current limits, breakdown voltage, on‑state resistance, gate charge behavior, and transient thermal impedance, along with package information and legal notices.
| Pulsed drain current (I_D,pulse) | 52 A |
|---|---|
| Power dissipation at 25 °C (P_D) | 208 W |
| Thermal resistance, junction‑to‑case (R_JC) | 0.6 K/W |
It can dissipate up to 208 W when the case temperature is 25 °C.
The junction‑to‑case thermal resistance is 0.6 K/W.