SPP20N60CFD is the next-generation high-voltage power transistor. Its RDS(on) is 0.22 ohm and ID is 20.7 A. The product has extremely low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability, intrinsic fast-recovery body diode and extremely low reverse recovery charge.
This document details the key characteristics of the Infineon SPP20N60CFD power MOSFET, including maximum ratings, electrical parameters, and thermal performance. It includes data such as continuous drain current, breakdown voltage, on‑state resistance, gate charge, and avalanche energy.
Additional sections cover typical output characteristics, transient thermal impedance, capacitance values, and package dimensions. The final pages contain legal notices, contact information, and revision history.
| Continuous drain current (Id) at 25 °C | 20.7 A |
|---|---|
| Drain‑source breakdown voltage (Vds) | 600 V |
| On‑state resistance (Rds(on)) typ at 25 °C | 0.22 Ω |
| Total gate charge (Qg) | 95 nC |
| Power dissipation (Pd) at 25 °C | 208 W |
| Avalanche energy (single pulse) | 690 mJ |
| Thermal resistance junction‑to‑case (Rjc) | 0.6 K/W |
The device can conduct a continuous drain current of 20.7 A at 25 °C.
The MOSFET is rated for a drain‑source breakdown voltage of 600 V.
The total gate charge is specified as 95 nC.
The typical on‑state resistance is 0.22 Ω at a gate voltage of 10 V.