This document describes the features of SPP12N50C3, SPI12N50C3, and SPA12N50C3 Cool MOS™ power transistors. These transistors utilize a revolutionary high voltage technology and have ultra low gate charge, periodic avalanche rating, and extreme dv/dt rating. Additionally, they have ultra low effective capacitances, improved transconductance, and fully isolated packaging. The document also lists the model numbers, packages, and ordering codes of these products, as well as their maximum ratings and thermal characteristics.
The SPP12N50C3 is a high‑voltage, low‑gate‑charge power MOSFET from Infineon Technologies. It features a 500 V drain‑source breakdown voltage, ultra‑low gate charge, and a fully isolated package suitable for demanding power applications.
The document provides maximum ratings, thermal characteristics, electrical parameters, and typical performance curves, enabling designers to assess suitability for high‑frequency switching, low‑loss power conversion, and other high‑voltage applications.
| Continuous drain current (Id) @ 25 °C | 11.6 A |
|---|---|
| Gate‑source voltage (Vgs) max | 20 V |
The device can conduct up to 11.6 A continuously at 25 °C.
The gate‑source voltage is limited to 20 V.