Key facts
- Brand
- Infineon
- Model
- SPA20N65C3
- Industry
- Industrial
- Documents
- 5
- Languages
- EN
- Last added
- 2012-04-06
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INFINEON SPP20N65C3 SPA20N65C3 SPI20N65C3 Manual
This datasheet provides the electrical, thermal and mechanical specifications for Infineon's high‑voltage power MOSFETs SPP20N65C3, SPA20N65C3 and SPI2Z0N65C3. It includes maximum ratings, characteristic curves, and typical performance graphs for designers.
Key sections cover features, maximum ratings, thermal characteristics, electrical characteristics, transient thermal impedance, and safety/legal notices. The document is intended for engineers selecting the device for high‑voltage, high‑current applications.
Infineon SPA20N65C3 specifications
| Drain‑Source breakdown voltage (VDS) | 650 V |
|---|---|
| Continuous drain current (Id) at 25 °C | 20.7 A |
| Power dissipation at 25 °C (Pd) | 34.5 W |
All Infineon SPA20N65C3 documents by type
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current at 25 °C?
The device can conduct a continuous drain current of 20.7 A at 25 °C.
What is the breakdown voltage rating of the MOSFET?
The MOSFET is rated for a drain‑source breakdown voltage of 650 V.
How much power can the device dissipate at 25 °C?
It can dissipate up to 208 W when the case temperature is 25 °C.
From: Infineon SPP20N65C3 / SPA20N65C3 / SPI20N65C3 Power MOSFET Datasheet
What is the thermal resistance from junction to case?
The junction‑to‑case thermal resistance is 0.6 K/W.
From: Infineon SPP20N65C3 / SPA20N65C3 / SPI20N65C3 Power MOSFET Datasheet
What is the maximum continuous drain current at 25 °C?
The device can conduct a continuous drain current of 20.7 A at 25 °C.
