SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor features 650 V VDS and 0.19 Ohm RDS(on), the lowest RDS(on) in TO-220 worldwide. It also has ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability and improved transconductance.
This datasheet provides the electrical, thermal and switching characteristics of Infineon's Cool MOS™ power transistors SPP20N65C3, SPA20N65C3 and SPI20N65C3. Key features include a 650 V drain‑source voltage, ultra‑low gate charge and high peak current capability.
The document lists maximum ratings, typical performance curves, transient thermal impedance and recommended operating conditions, along with safety and compliance notices for use in high‑voltage applications.
| Power Dissipation at 25 °C (PD) | 208 W |
|---|---|
| Thermal Resistance, Junction‑to‑Case (Rjc) | 0.6 K/W |
| Gate‑Source Voltage (VGS) Max | +30 V |
It can dissipate up to 208 W when the case temperature is 25 °C.
The junction‑to‑case thermal resistance is 0.6 K/W.