This document presents the technical specifications and features of the SPP20N65C3, SPA20N65C3, and SPI20N65C3 Cool MOS™ power transistors from Dinghao. These products feature high voltage technology, best-in-class RDS(on) in TO 220 package, ultra-low gate charge, high peak current capability, and improved transconductance.
The Infineon SPP20N65C3, SPA20N65C3 and SPI20N65C3 are high‑voltage, high‑current power MOSFETs designed for demanding applications. The document provides comprehensive electrical, thermal and mechanical specifications, including maximum ratings, characteristic curves and packaging details.
Key data include a continuous drain current of 20.7 A at 25 °C, a drain‑source breakdown voltage of 650 V, typical on‑state resistance of 0.16 Ω, and an avalanche energy rating of 690 mJ per pulse. Thermal resistance values, gate charge parameters and switching time graphs are also supplied to aid designers in thermal management and circuit design.
| Continuous drain current (Id) at 25 °C | 20.7 A |
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The device can conduct a continuous drain current of 20.7 A at 25 °C.