BFP650 is a NPN Silicon Germanium RF Transistor from Dinghao Electronics. It is used for high power amplifiers and low phase noise oscillators. The maximum gain is 21 dB at 1.8 GHz, the noise figure is 0.9 dB at 1.8 GHz, and it has gold metallization for high reliability. The fT is 70 GHz.
The BFP650 is an NPN silicon‑germanium RF transistor designed for high‑power amplifiers and low‑phase‑noise oscillators. It features gold metallization for high reliability and operates up to 70 GHz.
Key specifications include a collector‑emitter voltage of 4 V, collector current of 150 mA, maximum available gain of 21 dB at 1.8 GHz, and a noise figure of 0.9 dB at the same frequency. The document also supplies a complete Gummel‑Poon SPICE model and package equivalent circuit for circuit designers.
| Collector‑emitter voltage (VCEO) | 4 V |
|---|---|
| Collector current (IC) | 150 mA |
| Base current (IB) | 10 mA |
| Noise figure (F) | 0.9 dB at 1.8 GHz |
| Transition frequency (fT) | 37 GHz |
The BFP650 can withstand a collector‑emitter voltage of 4 V.
The noise figure is 0.9 dB at 1.8 GHz.
The transition frequency is specified as 37 GHz.