The BFP650 is a NPN Silicon Germanium RF transistor, mainly used in high power amplifiers and low phase noise oscillators, the maximum gain is 21 dB, noise figure is 0.9 dB, and the package is SOT343.
The BFP650 is an NPN silicon‑germanium RF transistor designed for high‑power amplifiers and low‑phase‑noise oscillators. It offers a maximum available gain of 21 dB at 1.8 GHz and a low noise figure of 0.9 dB at the same frequency.
The document lists detailed DC and AC characteristics, maximum ratings such as 4 V collector‑emitter voltage and 150 mA collector current, as well as a SPICE Gummel‑Poon model for circuit simulation. Handling precautions note that the device is electrostatic‑discharge sensitive.
| Collector‑emitter voltage (VCEO) | 4 V |
|---|---|
| Collector current (IC) | 150 mA |
| Base current (IB) | 10 |
| Total power dissipation | 500 mW |
| Transition frequency (fT) | 37 GHz |
| Maximum gain (Gmax) | 21 dB at 1.8 GHz |
| Noise figure (NF) | 0.9 dB at 1.8 GHz |
The maximum collector‑emitter voltage is 4 V.
The transition frequency is 37 GHz.
The typical DC current gain (hFE) is 180.
Yes, the device is electrostatic‑discharge sensitive and requires handling precautions.