The QSB363C is an NPN silicon phototransistor encapsulated in a clear plastic T-3/4 (2mm) surface mount package. It features a medium wide beam angle of 24° and is designed to match with QEB363 or QEB373 emitters. The device is available with various lead form options, including Gullwing, Yoke, and Z-Bend, and can be supplied in tape and reel or bulk packaging.
| Peak Sensitivity Wavelength | 940 nm |
|---|---|
| Reception Angle | ±12° |
| Operating Temperature | -25 to +85 °C |
| Collector Emitter Voltage | 30 V |
It is matched with QEB363 or QEB373 emitters.
The device offers Gullwing, Yoke, and Z-Bend lead options.
Yes, it is compatible with vapor phase reflow solder processes.