QSB363 Subminiature Plastic Silicon Infrared Phototransistor is a NPN silicon phototransistor produced by Fairchild Semiconductor Corporation. It is packaged in a T-3/4 (2mm) surface mount package with a medium wide beam angle of 24° and a black plastic package.
The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 (2mm) surface mount package. It features a medium wide beam angle of 24° and includes a daylight filter to reduce ambient light interference. The device is available with matched emitters (QEB363 or QEB373) and supports various lead form options including Gullwing, Y-oke, and Z-Bend.
| Peak Sensitivity Wavelength | 940 nm |
|---|---|
| Reception Angle | ±12° |
| Collector Emitter Breakdown Voltage | 30 V |
| Operating Temperature | -40 to +85 °C |
The peak sensitivity wavelength is 940 nm.
The device supports Gullwing, Y-oke, and Z-Bend lead configurations.
Yes, the package is compatible with automatic placement equipment.