Key facts
- Brand
- Fairchild
- Model
- FDPF44N25
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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Fairchild FDPF44N25 N-Channel MOSFET Datasheet
This document is a technical datasheet for the Fairchild FDPF44N25, an N-Channel enhancement mode power field effect transistor. The device utilizes Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for high-efficiency switched-mode power supplies and active power factor correction applications.
Read onlineFairchild FDPF44N25 specifications
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 18 A |
| Pulsed Drain Current | 72 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 2055 mJ |
| Power Dissipation (Tc = 25°C) | 56 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
All Fairchild FDPF44N25 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum single pulsed avalanche energy?
The device can withstand a single pulsed avalanche energy of up to 2055 mJ.
What is the maximum operating and storage temperature range?
The device operates and stores within a temperature range of -55 to +150 °C.
What is the operating and storage temperature range for these devices?
The operating and storage temperature range is from -55 to +150 °C.
From: Fairchild FDP44N25/FDPF44N25T 250V N-Channel MOSFET Datasheet
