This document describes the features of the FDPF44N25 UniFET TM N-Channel MOSFET. The product has a voltage rating of 250V, current rating of 18A, on-state resistance of 0.069Ω, low gate charge, and low Crss. It is suitable for high-efficiency switched mode power supplies and active power factor correction.
This document is a technical datasheet for the Fairchild FDPF44N25, an N-Channel enhancement mode power field effect transistor. The device utilizes Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for high-efficiency switched-mode power supplies and active power factor correction applications.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 18 A |
| Pulsed Drain Current | 72 A |
| Gate-Source Voltage | +30 V |
| Single Pulsed Avalanche Energy | 2055 mJ |
| Power Dissipation (Tc = 25°C) | 56 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
The device can withstand a single pulsed avalanche energy of up to 2055 mJ.
The device operates and stores within a temperature range of -55 to +150 °C.