This document describes the features and characteristics of FDP44N25 / FDPF44N25T 250V N-Channel MOSFET, including 44A current, 250V voltage, low gate charge, and low Crss value.
This document is a technical datasheet for the Fairchild FDP44N25 and FDPF44N25T N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe, DMOS technology and are designed for high efficiency switched mode power supplies and active power factor correction applications.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (25°C) | 44 A |
| Continuous Drain Current (100°C) | 26.4 A |
| Gate-Source Voltage | +30 V |
| Operating Temperature Range | -55 to +150 °C |
| Total Gate Charge (Typ) | 47 nC |
| Reverse Transfer Capacitance (Typ) | 60 pF |
The operating and storage temperature range is from -55 to +150 °C.