This document describes the features and characteristics of the FDP75N08 75V N-Channel MOSFET produced by Fairchild Semiconductor Corporation, including 75A current, 0.011Ω RDS(on), low gate charge, and low Crss.
This document is a datasheet for the Fairchild FDP75N08, a 75V N-Channel enhancement mode power field effect transistor. Produced using Fairchild's proprietary planar stripe DMOS technology, the device is designed for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts. Key features include a low on-state resistance of 0.011 Ω, low gate charge, and 100% avalanche testing.
| Drain-Source Voltage | 75 V |
|---|---|
| Continuous Drain Current (25°C) | 75 A |
| On-Resistance | 0.011 Ω |
| Gate Charge (Typical) | 150 nC |
| Reverse Transfer Capacitance | 85 pF |
| Package Type | TO-220 |
| Operating Temperature Range | -55 to +150 °C |
The on-state resistance is 0.011 Ω at a gate-source voltage of 10 V.
Yes, the device is 100% avalanche tested.
The maximum single pulsed avalanche energy is 1164 mJ.