FDP75N08A is a 75V N-Channel MOSFET with a rated current of 75A and a rated voltage of 75V. It has a fast switching speed and low on-state resistance and gate capacitance.
The document is a technical specification sheet for the Fairchild FDP75N08A, a 75V N-Channel enhancement mode power field effect transistor. It utilizes Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
Key electrical characteristics include a drain-source breakdown voltage of 75V, a continuous drain current of 75A at 25°C, and an on-resistance (RDS(on)) of 0.011 Ω at VGS = 10V. The device is designed for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topology. This manual is written in Chinese.
| Drain-Source Voltage (VDSS) | 75 V |
|---|---|
| Continuous Drain Current (ID) at TC = 25°C | 75 A |
| On-Resistance (RDS(on)) at VGS = 10V | 0.011 Ω |
| Operating and Storage Temperature Range | -55 to +150 °C |
The typical total gate charge is 145nC.
It is well suited for high efficient switched mode power supplies, active power factor correction, and electronic lamp ballast based on half bridge topology.