FDB6030L is a N-channel logic level enhancement mode power field effect transistor produced by Fairchild. It features low gate charge (typical 34 nC), low Crss (typical 175 pF) and fast switching speed. This device is particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
The document describes N-Channel logic level enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
| Drain-Source Voltage (Voss) | 30 V |
|---|---|
| Gate-Source Voltage (Continuous) | +20 V |
| Drain Current (Continuous) | 52 A |
| Maximum Power Dissipation @ Tj = 25°C | 75 W |
| Operating and Storage Temperature Range | -65 to 175 °C |
| Thermal Resistance, Junction-to-Case (RθJC) | 2 °C/W |
The device supports a continuous drain current of 52 A.
It has a maximum power dissipation rating of 75 W when the case is at 25°C.
The device operates and stores within a range of -65 to 175 °C.