Key facts
- Brand
- Fairchild
- Model
- FQAF12P20
- Category
- Other device
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-12
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FAIRCHILD FQAF12N20 Manual
The FQAF12P20 is a P‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high‑energy pulse capability, making it suitable for high‑efficiency DC/DC converters.
Key specifications include a -200 V drain‑source rating, -8.6 A continuous drain current at 25 °C, low gate charge (typical 31 nC), and a thermal resistance of 1.79 °C·W (junction‑to‑case). The device is supplied in a TO‑3PF package and includes detailed test circuit diagrams for gate charge, resistive switching, and diode recovery characteristics.
Fairchild FQAF12P20 specifications
| Drain‑Source Voltage (V_DSS) | -200 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | -8.6 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Total Gate Charge (Q_g) | 31 nC (typical) |
| Power Dissipation (P_D) at 25 °C | 70 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 1.79 °C·W |
| Package Type | TO-3PF |
Source: FAIRCHILD FQAF12N20 Manual
All Fairchild FQAF12P20 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQAF12P20?
The device is rated for a maximum drain‑source voltage of -200 V.
What continuous drain current can the FQAF12P20 handle at 25 °C?
It can conduct up to -8.6 A continuously at a junction temperature of 25 °C.
What is the maximum drain‑source voltage rating?
The device is rated for a drain‑source voltage of -200 V.
What is the power dissipation capability at 25 °C?
The MOSFET can dissipate up to 70 W at a junction temperature of 25 °C.