FDPA025N06 is a N-Channel PowerTrench® MOSFET from Fairchild Semiconductor, which features extremely low RDS(on), fast switching speed, low gate charge, high power and current handling capability.
This document is a technical datasheet for the Fairchild Semiconductor FDP025N06, an N-Channel PowerTrench MOSFET. The device utilizes advanced trench technology to achieve extremely low on-state resistance while maintaining superior switching performance. It is designed for high-power applications such as DC-to-DC converters and synchronous rectification.
| Drain to Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 265 A |
| Continuous Drain Current (Package Limited) | 4120 A |
| Static Drain to Source On Resistance | Typ. 2.5 mΩ |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Package Type | TO-220 |
The typical static drain to source on-resistance is 2.5 mΩ when Vgs = 10V and Id = 75A.
Yes, the device is listed as RoHS compliant in the features section.