Key facts
- Brand
- Fairchild
- Model
- FQPF9N50C
- Category
- Other Electronics
- Documents
- 3
- Languages
- EN
- Last added
- 2012-04-12
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Fairchild FQPF9N50CF 500V N-Channel MOSFET Datasheet
The FQPF9N50CF is a 500 V N‑Channel enhancement mode power MOSFET designed for high‑efficiency switched‑mode power supplies, active power factor correction, and half‑bridge lamp ballast applications. It features low gate charge (typical 28 nC), low output capacitance (typical 24 pF), fast switching, and a robust avalanche capability.
Key specifications include a continuous drain current of 9 A at 25 °C, a pulsed drain current of 36 A, and a maximum power dissipation of 44 W. The device is supplied in a TO‑220F package with thermal resistance values of 2.86 °C·W (junction‑to‑case) and 62.5 °C·W (junction‑to‑ambient). Detailed electrical characteristics, typical performance curves, and test circuit diagrams are provided.
Fairchild FQPF9N50C specifications
| Drain‑Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 9 A |
| Continuous Drain Current (I_D) @ 100 °C | 5.4 A |
| Pulsed Drain Current | 36 A |
| Gate‑Source Voltage (V_GS) | +30 V |
| Power Dissipation (P_D) @ 25 °C | 44 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.86 °C·W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C·W |
Source: Fairchild FQPF9N50CF 500V N-Channel MOSFET Datasheet
All Fairchild FQPF9N50C documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage of the FQPF9N50CF?
The device is rated for a maximum drain‑source voltage of 500 V.
What continuous drain current can the FQPF9N50CF handle at 25 °C?
It can continuously conduct up to 9 A at a case temperature of 25 °C.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 500 V.
What continuous drain current can the MOSFET handle at 25 °C?
It can conduct up to 9 A continuously at 25 °C.
What is the typical gate charge of the MOSFET?
The typical gate charge is 28 nC.
From: Fairchild FQP9N50C/FQPF9N50C 500V N-Channel MOSFET Datasheet
What is the single‑pulse avalanche energy rating?
The single‑pulse avalanche energy is rated at 360 mJ.
From: Fairchild FQP9N50C/FQPF9N50C 500V N-Channel MOSFET Datasheet