Key facts
- Brand
- Fairchild
- Model
- FDN338P
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-11
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ManualFAIRCHILD FDN338P Manual
FAIRCHILD FDN338P Manual
FDN338P is a P-channel MOSFET from Fairchild using Fairchild’s advanced low voltage PowerTrench process. It has low RDS(ON), high switching speed and is suitable for battery management, load switch and battery protection applications.
Read onlineFairchild FDN338P specifications
| Drain‑Source Voltage (V_DSS) | -20 V |
|---|---|
| Gate‑Source Voltage (V_GS) | +8 V (continuous) |
| Continuous Drain Current (I_D) | -1.6 A |
| Pulsed Drain Current | 5 A |
| Maximum Power Dissipation | 0.5 W |
| Operating Temperature Range | -55 °C to 150 °C |
| Total Gate Charge (Q_g) | 8.5 nC |
Source: Fairchild FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet
All Fairchild FDN338P documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Other documents 1
Questions answered in these manuals
What is the maximum drain‑source voltage for the FDN338P?
The device can tolerate a drain‑source voltage of up to –20 V.
From: Fairchild FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet
What continuous drain current can the FDN338P handle?
It is rated for a continuous drain current of –1.6 A.
From: Fairchild FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet