Key facts
- Brand
- Fairchild
- Model
- FQPF13N06
- Category
- Other Electronics
- Documents
- 4
- Languages
- EN
- Last added
- 2012-04-09
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FAIRCHILD FQPF13N06L Data Sheet(2)
The FQPF13NO06L is a 60 V N‑Channel enhancement mode MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as automotive, DC‑DC converters, and power management in portable, battery‑operated products.
Key features include a continuous drain current of 10 A, low gate charge (typical 4.8 nC), low output capacitance (typical 17 pF), fast switching, 100 % avalanche testing, and a maximum junction temperature of 175 °C. The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and test circuit diagrams.
Fairchild FQPF13N06 specifications
| Drain‑Source Voltage (V_DSS) | 60 V |
|---|---|
| Gate‑Source Voltage (V_GS) | ±20 V |
| On‑Resistance (R_DS(on)) | 0.119 Ω @ V_GS=10 V |
| Operating Temperature Range | -55 °C to +175 °C |
All Fairchild FQPF13N06 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQPF13NO06L?
The device is rated for a maximum drain‑source voltage of 60 V.
What is the maximum junction temperature rating?
The MOSFET is rated for a maximum junction temperature of 175 °C.
What is the maximum drain‑source voltage?
The device is rated for a maximum drain‑source voltage of 60 V.
What is the continuous drain current rating?
The continuous drain current rating is 10 A at 25 °C.
What is the maximum continuous drain current?
The device can carry 10 A continuously at 25 °C and 7 A continuously at 100 °C.
What is the on‑resistance at VGS = 5 V and ID = 5 A?
RDS(on) is about 0.110 Ω under those conditions.