This document describes the features and characteristics of the Fairchild Semiconductor Corporation's FDP025N06 N-Channel PowerTrench® MOSFET product, including 60V voltage, 265A current, 2.5mΩ resistance, etc.
The FDP025N06 is an N‑Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. It is designed for high‑current, low‑on‑resistance applications such as DC‑DC converters and synchronous rectification, offering a 60 V drain‑source rating and up to 265 A continuous drain current.
The datasheet lists detailed electrical ratings, thermal characteristics, mechanical dimensions, and test circuit waveforms. Key parameters include a typical Rds(on) of 1.9 mΩ at Vgs = 10 V, a maximum pulsed drain current of 1060 A, and a power dissipation of 395 W at 25 °C. The device is supplied in a TO‑220 package and is RoHS compliant.
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) – Silicon Limited | 265 A |
| Pulsed Drain Current (ID) – Silicon Limited | 1060 A |
| Typical On‑Resistance (RDS(on)) | 1.9 mΩ @ VGS=10 V, ID=75 A |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.38 °C/W |
| Power Dissipation (PD) at 25 °C | 395 W |
| Operating Temperature Range | -55 °C to +175 °C |
| RoHS Compliance | Yes |
The datasheet specifies a continuous drain current of 265 A at 25 °C (silicon limited).
Typical RDS(on) is 1.9 mΩ when VGS = 10 V and ID = 75 A.
Yes, the datasheet states that the device is RoHS compliant.