Key facts
- Brand
- Infineon
- Model
- SPP11N65C3
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-04-06
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Infineon SPP11N65C3 Power Transistor Datasheet
The SPP11N65C3 is Infineon's Cool MOS™ power transistor featuring ultra‑low gate charge, high peak current capability, and extreme dv/dt rating. It is offered in TO‑262, TO‑220FP and TO‑220 package styles.
The document lists maximum ratings, thermal characteristics, electrical parameters, and typical performance curves, enabling designers to evaluate the device for high‑voltage, high‑current applications.
Infineon SPP11N65C3 specifications
| Maximum Drain‑Source Voltage (VDS) | 650 V |
|---|---|
| On‑State Resistance (RDS(on)) | 0.38 Ω (typical) |
| Junction‑to‑Case Thermal Resistance (RthJC) | 1 K/W |
Source: Infineon SPP11N65C3 / SPA11N65C3 / SPI11N65C3 Cool MOS Power Transistor Datasheet
All Infineon SPP11N65C3 documents by type
Day-to-day operation, settings and troubleshooting. Start here if the product is already set up.
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current?
The device can handle a continuous drain current of 11 A at 25 °C.
What is the maximum drain‑source voltage rating?
The device is rated for a maximum drain‑source voltage of 650 V.
From: Infineon SPP11N65C3 / SPA11N65C3 / SPI11N65C3 Cool MOS Power Transistor Datasheet
What is the typical on‑state resistance?
The typical on‑state resistance is 0.38 Ω.
From: Infineon SPP11N65C3 / SPA11N65C3 / SPI11N65C3 Cool MOS Power Transistor Datasheet