BFP740F is a high gain, ultra low noise RF transistor that is ideal for a wide range of wireless applications, particularly for CDMA and WLAN applications. It has a noise figure of 0.5 dB at 1.8 GHz and 0.75 dB at 6 GHz. Furthermore, it features high maximum stable gain and high reliability.
The BFP740F is a silicon‑germanium NPN RF transistor designed for wireless applications such as CDMA and WLAN up to 10 GHz. It offers a low noise figure (0.5 dB at 1.8 GHz) and high maximum stable gain (27.5 dB at 1.8 GHz).
Key specifications include a collector‑emitter voltage of 13 V, collector current of 30 mA, transition frequency of 42 GHz, and a total power dissipation of 160 mW. The device is supplied in a TSFP‑4 surface‑mount package and is rated for junction temperatures up to 150 °C.
| Collector‑emitter voltage (VCEO) | 13 V |
|---|---|
| Noise figure (F) at 1.8 GHz | 0.5 dB |
| Maximum stable gain (Gms) at 1.8 GHz | 27.5 dB |
| Package type | TSFP‑4 |
The collector‑emitter breakdown voltage is 13 V.
The noise figure at 1.8 GHz is 0.5 dB.