Infineon BFP740F RF Transistor Datasheet

BFP740F is a silicon germanium RF transistor from Dinghao Semiconductor. It features high gain and ultra low noise, making it suitable for wireless applications up to 10GHz and above, such as CDMA and WLAN.


Infineon BFP740F RF Transistor Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
172 KB
Published
05 April, 2012
Updated
30 September, 2023
Model
BFP740F
MD5 checksum
D68EC2733DA43325A5673CD227B19944

About this manual

The BFP740F is an N‑type silicon‑germanium RF transistor offering high gain and ultra‑low noise performance up to 10 GHz. It is suited for CDMA, WLAN and other wireless applications, featuring a noise figure as low as 0.5 dB at 1.8 GHz and a maximum stable gain of 27.5 dB.

The document provides maximum ratings, thermal resistance, detailed DC and AC characteristics, SPICE model parameters, and package dimensions for the TSFP‑4 package. All values are measured at 25 °C unless otherwise noted.

What's inside

  • Maximum Ratings
  • Thermal Resistance
  • Electrical Characteristics
  • AC Characteristics
  • SPICE Parameters
  • Package Outline
  • Noise Figure
  • Transition Frequency
  • Power Gain
  • Third‑Order Intercept Point

Specifications

Noise figure at 1.8 GHz0.5 dB
Noise figure at 6 GHz0.75 dB
Maximum stable gain (Gms) at 1.8 GHz27.5 dB

Frequently asked questions

What noise figure does the BFP740F achieve at 1.8 GHz?

It achieves a noise figure of 0.5 dB at 1.8 GHz.

What is the maximum stable gain of the BFP740F at 1.8 GHz?

The maximum stable gain is 27.5 dB at 1.8 GHz.

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