Infineon BFP740 RF Transistor Datasheet

BFP740 is a NPN silicon germanium RF transistor supplied by Dinghao, which has the characteristics of high gain, ultra-low noise, etc. It is suitable for various wireless applications in the range of 1.8GHz to 10GHz, such as CDMA and WLAN applications.


Infineon BFP740 RF Transistor Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
45 KB
Published
05 April, 2012
Updated
30 September, 2023
Model
BFP740
MD5 checksum
C16E663CC9C4C36867499E7E54724D88

About this manual

The BFP740 is an N‑type silicon‑germanium RF transistor offering high gain (27.5 dB at 1.8 GHz) and ultra‑low noise (0.5 dB at 1.8 GHz). It is designed for wireless applications such as CDMA and WLAN up to 10 GHz and features gold metallization for reliability.

Key electrical parameters include a collector‑emitter voltage of 13 V, collector current of 30 mA, maximum power dissipation of 160 mW, and a transition frequency (fT) of 42 GHz. The device is supplied in a SOT‑343 package and requires careful ESD handling.

What's inside

  • Maximum Ratings
  • Thermal Resistance
  • DC Characteristics
  • AC Characteristics
  • Noise Figure
  • Power Gain
  • Third Order Intercept Point
  • 1dB Compression Point

Specifications

Noise figure at 1.8 GHz0.5 dB

Frequently asked questions

What is the typical noise figure at 1.8 GHz?

The typical noise figure at 1.8 GHz is 0.5 dB.

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