BFP740 is a RF transistor produced by Dinghao Electronic Components Co., Ltd. It uses silicon germanium technology and has the characteristics of high gain and low noise, which is very suitable for CDMA and WLAN wireless communication applications.
The BFP740 is an N‑type Silicon‑Germanium RF transistor offering high gain and ultra‑low noise performance for wireless applications up to 10 GHz, such as CDMA and WLAN. It features a gold‑metallized SOT‑343 package for high reliability and a maximum stable gain of 27.5 dB at 1.8 GHz.
The document lists detailed electrical parameters, including collector‑emitter voltage, current limits, power dissipation, transition frequency, and noise figures. It also contains handling warnings, thermal resistance data, and legal disclaimer information from Infineon Technologies AG.
| Noise figure at 1.8 GHz | 0.5 dB |
|---|---|
| Noise figure at 6 GHz | 0.85 dB |
It achieves a noise figure of 0.5 dB at 1.8 GHz.