BFP520F is a NPN silicon RF transistor produced by SIEGET company. It has the characteristics of high gain, low noise, and high reliability. It is suitable for 1.8GHz and 2mA/2V RF low noise amplifiers, and also suitable for oscillators below 15GHz.
The BFP520F is an NPN silicon RF transistor designed for high‑gain, low‑noise amplifiers at 1.8 GHz and for oscillators up to 15 GHz. It features a transition frequency of 45 GHz, a noise figure of 0.95 dB, and a power gain of 23 dB.
The datasheet lists maximum ratings (VCEO 2.5 V, Vcbo 10 V, Ic 40 mA, power dissipation 100 mW), detailed DC and AC electrical characteristics, and a complete set of SPICE (Gummel‑Poon) model parameters for circuit simulation. The device is supplied in a TSFP‑4 package with two emitter leads.
| Collector‑emitter voltage (VCEO) | 2.5 V |
|---|---|
| Collector‑base voltage (Vcbo) | 10 V |
| Collector current (Ic) | 40 mA |
| Total power dissipation (Ptot) | 100 mW |
| Transition frequency (fT) | 45 GHz |
| Noise figure (NF) at 1.8 GHz | 0.95 dB |
| Power gain | 23 dB |
The maximum collector current is 40 mA.
The transition frequency is 45 GHz.
It uses a TSFP‑4 package with two emitter leads combined into one electrical connection.