The BFP520F is an NPN silicon RF transistor designed for high‑gain, low‑noise amplifiers up to 1.8 GHz and for oscillators up to 15 GHz. It features a transition frequency of 45 GHz, a noise figure of 0.95 dB, and gold metallization for reliability.
The document lists maximum ratings, detailed DC and AC electrical characteristics, and a complete SPICE (Gummel‑Poon) model for circuit simulation. Package information for the TSFP‑4 case and thermal resistance data are also included.
| Collector‑emitter voltage (VCEO) | 2.5 V |
|---|---|
| Collector current (IC) | 40 mA |
| Transition frequency (fT) | 45 GHz |
| Noise figure (NF) | 0.95 dB |
| Total power dissipation (Ptot) | 100 mW |
The maximum collector current is 40 mA.
The transition frequency is 45 GHz.
It uses the TSFP‑4 package with two emitter leads.
The noise figure is 0.95 dB.