BFP520 NPN Silicon RF transistor, with the highest gain low noise amplifier characteristic, at 1.8GHz and 2mA/2V, Gms=23dB, Noise Figure F=0.95dB, can be used for oscillators up to 15GHz, transition frequency fT=45GHz, with gold metallization technology, with high reliability
The BFP520 is an N‑type silicon RF transistor designed for high‑gain low‑noise amplifiers up to 1.8 GHz and oscillators up to 15 GHz. It features a transition frequency of 45 GHz, a typical noise figure of 0.95 dB, and a maximum collector‑emitter voltage of 2.5 V.
The document provides detailed electrical characteristics, maximum ratings, S‑parameters, noise parameters and SPICE model data for the SOT‑343 package. It also includes power‑dissipation curves and permissible pulse‑load information for design and simulation purposes.
| Collector‑emitter voltage (VCEO) | 2.5 V |
|---|---|
| Collector‑base voltage (VCBO) | 10 V |
| Emitter‑base voltage (VEBO) | 1 V |
| Collector current (IC) | 40 mA |
| Base current (IB) | 4 mA |
| Total power dissipation (PD) | 100 mW |
| Transition frequency (fT) | 45 GHz |
| Noise figure (NF) at 1.8 GHz | 0.95 dB |
| Maximum stable gain (Gms) | 23 dB |
The BFP520 can handle up to 40 mA of collector current.
The transistor has a transition frequency of 45 GHz.
The typical noise figure is 0.95 dB at 1.8 GHz.