BFP520 is a high frequency transistor produced by SIEGET company. It has the characteristics of high gain and low noise, suitable for 1.8GHz and 2mA/2V low noise amplifier, it can also be used for oscillators below 15GHz. The maximum junction temperature of the transistor is 150℃, the working current is 40mA, and the maximum power consumption is 100mW.
The BFP520 is a high‑gain, low‑noise NPN silicon RF transistor designed for use in amplifiers up to 1.8 GHz and oscillators up to 15 GHz. It features a gold‑metallized package for high reliability and is supplied in a SOT‑343 package with two emitter leads.
The datasheet provides maximum ratings, DC and AC characteristics, S‑parameters, noise parameters, and a SPICE model. Key performance figures include a transition frequency of 45 GHz, a typical noise figure of 0.95 dB at 1.8 GHz, and a maximum collector current of 40 mA.
| Transition frequency (f_T) | 45 GHz |
|---|---|
| Noise figure (typical) | 0.95 dB |
| Emitter‑base voltage (V_EBO) | 1 V |
The transition frequency f_T is 45 GHz.
The typical noise figure is 0.95 dB.