This document describes the features and characteristics of FDP032N08 N-Channel PowerTrench® MOSFET, including 75V drain-to-source voltage, 235A drain current, and 3.2mΩ on-state resistance.
This document is a technical datasheet for the Fairchild Semiconductor FDP032N08, an N-Channel PowerTrench MOSFET. The device features fast switching speed and high performance trench technology designed to minimize on-state resistance while maintaining superior switching capabilities.
The FDP032N08 is rated for 75V drain-to-source voltage with a continuous drain current of up to 235A (silicon limited) at 25°C. It utilizes the TO-220 package and is RoHS compliant, making it suitable for applications such as DC to DC converters and synchronous rectification.
| Drain to Source Voltage (Vdss) | 75 V |
|---|---|
| Static Drain to Source On Resistance (Typical) | 3.2 mΩ |
| Package Type | TO-220 |
| Operating Temperature Range | -55 to +175 °C |
The typical static drain-to-source on-resistance (Rds(on)) is 3.2 mΩ at Vgs = 10V and Id = 75A.
The device is designed for use in DC to DC converters and synchronous rectification circuits.