The FDP032N08 is a N-Channel PowerTrench MOSFET with an extremely low RDS(on), fast switching speed and low gate charge. It can be used for DC/DC converters and synchronous rectification applications.
The FDP032N08 is a N‑Channel PowerTrench MOSFET offering 75 V drain‑source voltage and a continuous drain current of up to 235 A. It features low on‑resistance (typical 2.5 mΩ), fast switching speed, low gate charge and RoHS compliance.
The document provides maximum ratings, detailed electrical and thermal characteristics, package dimensions, and legal/trademark information. It is intended for designers of DC‑DC converters, synchronous rectifiers and other high‑power applications.
| Drain‑Source Voltage (VDS) | 75 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (Id) – Silicon Limited | 235 A |
| Pulsed Drain Current (Id,pulse) | 940 A |
| Typical On‑Resistance (RDS(on)) | 2.5 mΩ |
| Total Gate Charge (Qg) | 169 nC |
| Input Capacitance (Ciss) | 11.4 nF |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.4 °C/W |
| Maximum Power Dissipation (PD) | 375 W |
The datasheet lists a continuous drain current of 235 A (silicon limited) at 25 °C.
The typical on‑resistance is 2.5 mΩ at VGS = 10 V and ID = 75 A.
It is rated for 75 V drain‑source voltage and +20 V gate‑source voltage.