Key facts
- Brand
- STMicroelectronics
- Model
- STE38NB50
- Category
- Other Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-10
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STMicroelectronics STE38NB50F N-Channel MOSFET Datasheet
This document is a datasheet for the STE38NB50F, an N-channel PowerMESH MOSFET manufactured by STMicroelectronics. It highlights key features such as a typical on-resistance of 0.11 Ω, extremely high dv/dt capability, and a gate-source voltage rating of ±30V. The device is designed for high current, high speed switching applications including SMPS, welding equipment, and motor drives.
Read onlineSTMicroelectronics STE38NB50 specifications
| Drain-source Voltage | 500 V |
|---|---|
| Gate-source Voltage Rating | ±30 V |
| Continuous Drain Current (25°C) | 38 A |
| Typical On-Resistance | 0.11 Ω |
| Peak Diode Recovery voltage slope | 4.5 V/ns |
| Storage Temperature | -65 to 150 °C |
Source: STMicroelectronics STE38NB50F N-Channel MOSFET Datasheet
All STMicroelectronics STE38NB50 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the applications for the STE38NB50F?
The device is suitable for high current, high speed switching, switch mode power supply (SMPS), DC-AC converters for welding equipment, uninterruptible power supply, and motor drive.
From: STMicroelectronics STE38NB50F N-Channel MOSFET Datasheet
What is the maximum junction temperature?
The maximum operating junction temperature is 150 °C.
From: STMicroelectronics STE38NB50F N-Channel MOSFET Datasheet