STE38NB50 N-CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH MOSFET is an advanced family of power MOSFETs with outstanding performances designed by SGS-Thomson. This product provides the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
This document provides a technical overview of the STE38NB50 N-Channel MOSFET, a high-voltage device utilizing the Isotop process. Key features include a 500V drain-source voltage rating, 38A continuous drain current, and low intrinsic capacitance designed for high-speed switching applications.