SPP18P06P SPB18P06P is a P-channel enhancement mode Schottky power transistor from Texas Instruments, which has high reverse diode dv/dt, 175°C operating temperature and low on-state resistance.
The Infineon SPP18P06P (and its SPB18P06P variant) is a P‑channel power MOSFET presented with detailed electrical, thermal and safety specifications. The document lists maximum ratings, characteristic curves, and typical performance parameters for design engineers.
Key sections include product summary, maximum ratings, thermal characteristics, static and dynamic electrical characteristics, reverse‑diode behavior, and safe operating area graphs. The final pages contain legal notices and contact information for Infineon Technologies AG.
| Drain‑source voltage (Vds) | -60 V |
|---|---|
| Power dissipation (Pd) | 80 W |
| Gate‑source voltage (Vgs) | +20 V |
The device can dissipate up to 80 W.
The gate‑source voltage rating is +20 V.