SPP18P06P SIPMOS Power-Transistor is an enhancement type three-terminal power switch transistor for P-channel applications with Avalanche rating and 175°C operating temperature.
The SPP18P06P is a P‑channel enhancement‑mode power transistor with a -60 V drain‑source rating and a continuous drain current of -18.6 A. It features low on‑state resistance, avalanche and dv/dt robustness, and operates from -55 °C to +175 °C.
The document provides detailed electrical, thermal, and dynamic parameters, including typical RDS(on) values, gate charge characteristics, avalanche energy, and safe operating area curves, along with mechanical dimensions and package information. This manual is written in Chinese.
| Drain‑source voltage (VDS) | -60 V |
|---|---|
| Continuous drain current (ID) | -18.6 A |
| On‑state resistance (RDS(on)) | 0.13 mΩ (typ) |
| Gate‑source voltage (VGS) rating | ±20 V |
| Power dissipation (Ptot) at 25 °C | 80 W |
| Operating temperature range | -55 °C to +175 °C |
The transistor is rated for a maximum drain‑source voltage of -60 V.
It can conduct a continuous drain current of -18.6 A.
Typical RDS(on) is 0.13 mΩ.
It operates from -55 °C up to +175 °C.