This document describes the features and characteristics of the SPP11N65C3, SPA11N65C3, and SPI11N65C3 Cool MOS™ power transistors, including new high voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability, and improved transconductance.
The SPP11N65C3 is Infineon's Cool MOS™ power transistor featuring ultra‑low gate charge, high peak current capability, and extreme dv/dt rating. It is offered in TO‑262, TO‑220FP and TO‑220 package styles.
The document lists maximum ratings, thermal characteristics, electrical parameters, and typical performance curves, enabling designers to evaluate the device for high‑voltage, high‑current applications.
| Continuous drain current (I_D) | 11 A |
|---|---|
| Operating temperature range | -55 °C to +150 °C |
The device can handle a continuous drain current of 11 A at 25 °C.