The Infineon BSM 25 GD 120 DN2 is a 1200 V, 35 A IGBT power module in an ECONOPACK 2 package. The datasheet provides maximum ratings, static and switching characteristics, thermal data, and mechanical dimensions for design engineers.
Key sections cover maximum voltage and current ratings, gate and collector characteristics, switching times, power dissipation curves, and package outlines, along with terms of use and contact information for further technical support.
| Collector‑emitter voltage (VCE) | 1200 V |
|---|---|
| Maximum collector current (IC) | 35 A |
| Gate‑emitter voltage (VGE) | +20 V |
| Thermal resistance, chip‑case (RθJC) | <0.6 K/W |
| Maximum operating temperature (Tj) | 150 °C |
| Package dimensions (L×W×H) | 15.24 mm × 15.24 mm × 60.96 mm |
The module can withstand up to 1200 V between collector and emitter.
The rated continuous collector current is 35 A at 25 °C.
The thermal resistance from chip to case is less than 0.6 K/W.
The package outlines section lists dimensions of 15.24 mm × 15.24 mm × 60.96 mm.