EUPEC BSM 100 GD 120 DN2 IGBT Power Module Datasheet

BSM 100 GD 120 DN2 is an IGBT power module from Infineon with a maximum collector-emitter voltage of 1200 V and a maximum collector current of 150 A.


EUPEC BSM 100 GD 120 DN2 IGBT Power Module Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
298 KB
Published
06 April, 2012
Updated
30 September, 2023
Model
DN2
MD5 checksum
F43A99A905D4E41C08974F4501A69414

About this manual

The BSM 100 GD 120 DN2 is a 3‑phase full‑bridge IGBT power module with fast free‑wheel diodes and an insulated metal base plate. It is rated for 1200 V collector‑emitter voltage and 150 A continuous collector current at 25 °C.

The document provides maximum ratings, detailed static and switching characteristics, safe operating area limits, capacitance values and usage terms. It is intended for technically trained personnel and includes warranty and safety notices.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Switching Characteristics
  • Safe Operating Area
  • Typical Output Characteristics
  • Gate Charge
  • Forward Characteristics of Fast Recovery Diode
  • Terms & Conditions of Usage

Specifications

Collector‑emitter voltage (VCE)1200 V
Continuous collector current (Ic) at 25 °C150 A

Frequently asked questions

What is the maximum collector‑emitter voltage rating?

The module is rated for a collector‑emitter voltage of 1200 V.

How much continuous collector current can the module handle at 25 °C?

It can handle up to 150 A of continuous collector current at 25 °C.

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