BSM 10 GD 120 DN2 is a power module from Infineon, including fast recovery diodes, packaged in ECONOPACK 2K, with a maximum voltage of 1200V and a maximum current of 15A.
The BSM10GD120DN2 is a 3‑phase full‑bridge IGBT power module with fast free‑wheel diodes, packaged in an insulated metal base plate (ECONOPACK). It is rated for 1200 V collector‑emitter voltage and 15 A continuous collector current at 25 °C.
The document provides detailed maximum ratings, static and switching characteristics, safe operating area limits, capacitance values, and thermal impedance data. It also includes a package outline, circuit diagram, and terms of use for technical personnel.
| Collector‑emitter voltage (VCE) | 1200 V |
|---|---|
| Gate‑emitter voltage (VGE) | +20 V |
| DC collector current (IC) | 15 A |
| Power dissipation per IGBT (P_R) | 80 W @ 25 °C |
| Thermal resistance, chip‑case (R_thc) | <1.52 K/W |
The module is rated for a maximum collector‑emitter voltage of 1200 V.
The continuous DC collector current is 15 A at an ambient temperature of 25 °C.
The thermal resistance from chip to case is less than 1.52 K/W.