BSM 50 GB 120 DN2 is an half-bridge IGBT power module produced by Infineon with maximum DC collector current of 78A and maximum collector-emitter voltage of 1200V.
This datasheet describes the Infineon BSM 50 GB 120 DN2 IGBT power module, a half‑bridge device with insulated metal base plate. It lists maximum ratings such as 1200 V collector‑emitter voltage, 78 A collector current at 25 °C, and a power dissipation of 400 W at 25 °C. Thermal characteristics include a chip‑case thermal resistance of 0.3 K/W and diode thermal resistance of 0.6 K/W.
The document also contains usage terms and conditions, stating that the data are intended for technically trained personnel and that warranties are limited to the supply agreement. Contact information for further product information and application notes is provided.
| Collector‑emitter voltage (VoE) | 1200 V |
|---|---|
| Collector current (Ic) at 25 °C | 78 A |
| Gate‑emitter voltage (VGE) | 20 V |
| Power dissipation at 25 °C | 400 W |
| Thermal resistance, chip‑case | 0.3 K/W |
| Storage temperature range | -40 °C to +125 °C |
The maximum collector‑emitter voltage is 1200 V.
The module can be stored from –40 °C up to +125 °C.
The chip‑case thermal resistance is 0.3 K/W.