This document introduces the N-Channel MOSFET product FQP10N60C/FQPF10N60C from Fairchild Semiconductor Corporation. This product is produced using advanced DMOS technology and features low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for applications such as high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
The Fairchild FQP10N60C and FQPF10N60C are 600 V N‑Channel enhancement‑mode power MOSFETs built with planar stripe DMOS technology. They are designed for high‑efficiency switched‑mode power supplies, active power factor correction, and half‑bridge lamp ballast applications.
The document provides absolute maximum ratings, thermal characteristics, detailed electrical parameters, typical performance curves, and mechanical package dimensions for the TO‑220 and TO‑220F variants. It also includes trademark information, legal notices, and product status definitions.
| Drain‑Source Voltage (V_DSS) | 600 V |
|---|---|
| Gate Charge (Q_g) typical | 44 nC |
| Junction‑to‑Case Thermal Resistance | 0.8 °C·W |
| Package | TO‑220 / TO‑220F |
The MOSFET can withstand up to 600 V drain‑source voltage.
The typical gate charge is 44 nC.
It is supplied in a TO‑220 (or TO‑220F) package.