FQP10N60C / FQPF10N60C is a 600V N-Channel MOSFET from Fairchild Semiconductor Corporation with 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V, low gate charge (typical 44 nC), low Crss (typical 18 pF), fast switching, 100% avalanche tested and improved dv/dt capability.
The Fairchild FQP10N60C and FQPF10N60C are 600 V N‑Channel power MOSFETs designed for high‑efficiency switched‑mode power supplies, active power factor correction, and electronic lamp ballasts. They feature low gate charge (typical 44 nC) and low output capacitance, providing fast switching and low loss.
The document provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, mechanical dimensions for TO‑220 and TO‑220F packages, and test circuit waveforms. It also includes trademark information and legal notices from Fairchild Semiconductor.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 9.5 A |
| Pulsed Drain Current (ID,pulse) | 38 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Power Dissipation (PD) at 25 °C | 156 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.8 °C/W |
| Output Capacitance (Coss) typical | 166 pF |
| Reverse Transfer Capacitance (Crss) typical | 18 pF |
The maximum continuous drain current at 25 °C is 9.5 A.