FQL40N50F is an N-channel MOSFET produced by Fairchild. This device uses Fairchild's proprietary planar stripe DMOS technology, which has low on-resistance, high switching speed and high dv/dt capability.
This document is a technical datasheet for the Fairchild Semiconductor FQL40N50F, an N-channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance suitable for high-efficiency switch-mode power supplies.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 40 A |
| On-Resistance | 0.119 Ω |
| Operating Temperature Range | -55 to +150 °C |
The device operates and stores within a temperature range of -55 to +150 °C.
The device can withstand a single pulsed avalanche energy of 1800 mJ.