User Manual
The FDN358P is a P-Channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced Power Trench process that has been specially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
User Manual
The document describes the features and characteristics of the March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor, including maximum ratings, operating temperature range, thermal resistance, etc.
User Manual
This document describes the features and characteristics of the FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor, released in March 1998. It includes information about its maximum voltage, maximum power dissipation, operating temperature range, etc.
