The FDN358P is a P-Channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced Power Trench process that has been specially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
The document describes the Fairchild Semiconductor FDN358P, a Single P-Channel Logic Level PowerTrench® MOSFET. This device utilizes advanced Power Trench process technology to minimize on-state resistance while maintaining low gate charge for superior switching performance.
It is well-suited for portable electronics applications such as load switching, power management, battery charging circuits, and DC/DC conversion. The FDN358P features a SuperSOT™3 package with an identical pin-out to the standard SOT-23 but offers 30% higher power handling capability.
| Drain-Source Voltage | -30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Operating Junction Temperature Range | -55 to +150 °C |
| Total Gate Charge | 4 nC (Typical) |
This device is well suited for load switching and power management, battery charging circuits, and DC/DC conversion.